Browsing by Subject "Magnetic tunnel junction"
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Article
Indium oxide as a possible tunnel barrier in spintronic devices
(2005)We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related ...
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Conference Object
Magnetic domain-wall racetrack memory for high density and fast data storage
(2012)The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple ...